Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers
نویسندگان
چکیده
منابع مشابه
AlGaN/GaN HFET: Operating Principle And Noise Performance
The operating principle and noise performance in AlGaN/GaN HFETs has been studied. In particular, it has been demonstrated that substrate material selection plays a great role in device performance for application point of view. Polarization induced surface states plays key role in formation of 2 DEG. Performance parameters study of device is related to noise study in devices because low freque...
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ژورنال
عنوان ژورنال: Science China Information Sciences
سال: 2018
ISSN: 1674-733X,1869-1919
DOI: 10.1007/s11432-018-9503-9